A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node. - Xinggong Wan; Sandhya Chandrashekhar; Boris Bayha; Martin Trentzsch; Torben Balzer; Mahesh Siddabathula; Oliver Aubel (Microelectron. Reliab., 2014)

Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. - Evelyn T. Breyer; Halid Mulaosmanovic; Jens Trommer; Thomas Melde; Stefan Dünkel; Martin Trentzsch; Sven Beyer; Thomas Mikolajick; Stefan Slesazeck (ESSDERC, 2019)

Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning. - Carlo Cagli; Luca Perniola; Fred Gaillard; Stefan Dünkel; Thomas Melde; B. Mueller; Martin Trentzsch; Sven Wittek; Sven Beyer (IRPS, 2019)

Novel embedded single poly floating gate flash demonstrated in 22nm FDSOI technology. - Thomas Melde; Martin Trentzsch; Stefan Dünkel; Ralf Richter; Michael Otto 003; H. Giesler; Francois Weisbuch; N. Weddeler; Sven Beyer (IMW, 2021)