A 50-W low distortion GaAs MESFET for digital cellular base stations. - Fuminobu Ono; Zenzo Singu; Kazunori Asano; Junko Morikawa; Masaaki Kuzuhara; Fumiaki Emori (IEEE J. Solid State Circuits, 1997)

L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations. - Isao Takenaka; Kouji Ishikura; Hidemasa Takahashi; Kazunori Asano; Junko Morikawa; K. Satou; K. Kishi; Kouichi Hasegawa; K. Tokunaga; Fumiaki Emori; Masaaki Kuzuhara (IEEE J. Solid State Circuits, 1999)

Theoretical simulation of DC and RF performance for AlInN/InGaN/AlInN double-heterojunction FET using a Monte Carlo approach. - Kazuki Kodama; Masaaki Kuzuhara (IEICE Electron. Express, 2008)

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices. - Masaaki Kuzuhara (IEICE Trans. Electron., 2008)

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures. - Hironari Chikaoka; Yoichi Takakuwa; Kenji Shiojima; Masaaki Kuzuhara (IEICE Trans. Electron., 2009)

Foreword. - Masaaki Kuzuhara (IEICE Trans. Electron., 2010)

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures. - Maiko Hatano; Norimasa Yafune; Hirokuni Tokuda; Yoshiyuki Yamamoto; Shin Hashimoto; Katsushi Akita; Masaaki Kuzuhara (IEICE Trans. Electron., 2012)

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si. - Taketoshi Tanaka; Norikazu Ito; Shinya Takado; Masaaki Kuzuhara; Ken Nakahara (IEICE Trans. Electron., 2020)