A 3.5 V, 1.3 W GaAs power multi-chip IC for cellular phones. - Masahiro Maeda; Masaaki Nishijima; Hiroyasu Takehara; Chinatsu Adachi; Hiromasa Fujimoto; Osamu Ishikawa (IEEE J. Solid State Circuits, 1994)

K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. - Noboru Negoro; Masayuki Kuroda; Tomohiro Murata; Masaaki Nishijima; Yoshiharu Anda; Hiroyuki Sakai 001; Tetsuzo Ueda; Tsuyoshi Tanaka (IEICE Trans. Electron., 2012)