Development of Impulsive Object Sorting Device with Air Floating. - Shinichi Hirai; Masaaki Niwa; Sadao Kawamura (ICRA, 1999)

Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics. - Koji Eriguchi; Yoshinao Harada; Masaaki Niwa (Microelectron. Reliab., 2001)

Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor. - Soshi Sato; Kikuo Yamabe; Tetsuo Endoh; Masaaki Niwa (Microelectron. Reliab., 2016)

Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. - Masanori Natsui; Akira Tamakoshi; Hiroaki Honjo; Toshinari Watanabe; Takashi Nasuno; Chaoliang Zhang; Takaho Tanigawa; Hirofumi Inoue; Masaaki Niwa; Toru Yoshiduka; Yasuo Noguchi; Mitsuo Yasuhira; et al. (VLSI Circuits, 2020)

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition. - Masanori Natsui; Akira Tamakoshi; Hiroaki Honjo; Toshinari Watanabe; Takashi Nasuno; Chaoliang Zhang; Takaho Tanigawa; Hirofumi Inoue; Masaaki Niwa; Toru Yoshiduka; Yasuo Noguchi; Mitsuo Yasuhira; et al. (IEEE J. Solid State Circuits, 2021)