A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning. - Masahisa Iida; Naoki Kuroda; Hidefumi Otsuka; Masanobu Hirose; Yuji Yamasaki; Kiyoto Ohta; Kazuhiko Shimakawa; Takashi Nakabayashi; Hiroyuki Yamauchi; Tomohiko Sano; Takayuki Gyohten; Masanao Maruta; et al. (IEEE J. Solid State Circuits, 2005)

A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing Circuits. - Shigeki Ohbayashi; Makoto Yabuuchi; Koji Nii; Yasumasa Tsukamoto; Susumu Imaoka; Yuji Oda; Tsutomu Yoshihara; Motoshige Igarashi; Masahiko Takeuchi; Hiroshi Kawashima; Yasuo Yamaguchi; Kazuhiro Tsukamoto; et al. (IEEE J. Solid State Circuits, 2007)

A Large-Scale, Flip-Flop RAM Imitating a Logic LSI for Fast Development of Process Technology. - Masako Fujii; Koji Nii; Hiroshi Makino; Shigeki Ohbayashi; Motoshige Igarashi; Takeshi Kawamura; Miho Yokota; Nobuhiro Tsuda; Tomoaki Yoshizawa; Toshikazu Tsutsui; Naohiko Takeshita; Naofumi Murata; et al. (IEICE Trans. Electron., 2008)