Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. - Shun'ichiro Ohmi; Min Gee Kim; Masakazu Kataoka; Masaki Hayashi; Rengie Mark D. Mailig (DRC, 2020)

Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes. - Min Gee Kim; Masakazu Kataoka; Rengie Mark D. Mailig; Shun'ichiro Ohmi (IEICE Trans. Electron., 2020)