Detailed investigation of the effects of La and Al content on the electrical characteristics and reliability properties of La-Al-O gate dielectrics. - Masamichi Suzuki; Masato Koyama; Atsuhiro Kinoshita (Microelectron. Reliab., 2010)

Improvement of gate disturb degradation in SONOS FETs for Vth mismatch compensation in CMOS analog circuits. - Masamichi Suzuki; Atsuhiro Kinoshita; Yuichiro Mitani (ICICDT, 2013)

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. - Yusuke Higashi; Riichiro Takaishi; Koichi Kato; Masamichi Suzuki; Yasushi Nakasaki; Mitsuhiro Tomita; Yuichiro Mitani; Masuaki Matsumoto; Shohei Ogura; Katsuyuki Fukutani; Kikuo Yamabe (Microelectron. Reliab., 2017)

Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation. - Takao Marukame; Kodai Ueyoshi; Tetsuya Asai; Masato Motomura; Alexandre Schmid; Masamichi Suzuki; Yusuke Higashi; Yuichiro Mitani (IEEE Trans. Circuits Syst. II Express Briefs, 2017)

New Insights into the Imprint Effect in FE-HfO2 and its Recovery. - Yusuke Higashi; Karine Florent; A. Subirats; Ben Kaczer; Luca Di Piazza; Sergiu Clima; Nicolo Ronchi; Sean R. C. McMitchell; Kaustuv Banerjee; Umberto Celano; Masamichi Suzuki; Dimitri Linten; et al. (IRPS, 2019)

Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V. - Harumi Seki; Reika Ichihara; Yusuke Higashi; Yasushi Nakasaki; Masumi Saitoh; Masamichi Suzuki (IRPS, 2023)