Standard Description Form for Device Characteristics in VLSI's. - Masunori Sugimoto; Masao Fukuma (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1986)

Process-Based Three-Dimensional Capacitance Simulation – TRICEPS. - R. H. Uebbing; Masao Fukuma (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1986)

Memory LSI reliability. - Masao Fukuma; Hiroshi Furuta; Masahide Takada (Proc. IEEE, 1993)

A 60-ns 1-Mb nonvolatile ferroelectric memory with a nondriven cell plate line write/read scheme. - Hiraki Koike; Tetsuya Otsuki; Tohru Kimura; Masao Fukuma; Yoshihiro Hayashi; Yukihiko Maejima; Kazushi Amanuma; Nobuhira Tanabe; Takeo Matsuki; Shinobu Saito; Tsuneo Takeuchi; Souta Kobayashi; et al. (IEEE J. Solid State Circuits, 1996)