An 0.8-μm high-voltage IC using a newly designed 600-V lateral p-channel dual-action device on SOI. - Kiyoto Watabe; Hajime Akiyama; Tomohide Terashima; Masakazu Okada; Shinji Nobuto; Masao Yamawaki; Sotoju Asa (IEEE J. Solid State Circuits, 1998)

Current Ratio Transfer Standard and Improved Equivalent Ampere Turn Method. - Kunihiko Takahashi; Masao Yamawaki; Takuya Tadokoro (IEEE Trans. Instrum. Meas., 2013)