A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. - Hisao Shigematsu; Masaru Sato 001; Toshihide Suzuki; Tsuyoshi Takahashi; Kenji Imanishi; Naoki Hara; Hiroaki Ohnishi; Yuu Watanaba (IEEE J. Solid State Circuits, 2001)

A 54-GHz distributed amplifier with 6-VPP output for a 40-Gb/s LiNbO3 modulator driver. - Hisao Shigematsu; Masaru Sato 001; Tatsuya Hirose; Yuu Watanabe (IEEE J. Solid State Circuits, 2002)

A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique. - Yusuke Inoue 003; Masaru Sato 001; Toshihiro Ohki; Kozo Makiyama; Tsuyoshi Takahashi; Hisao Shigematsu; Tatsuya Hirose (IEEE J. Solid State Circuits, 2005)

60 and 77GHz Power Amplifiers in Standard 90nm CMOS. - Toshihide Suzuki; Yoichi Kawano; Masaru Sato 001; Tatsuya Hirose; Kazukiyo Joshin (ISSCC, 2008)

A 77GHz transceiver in 90nm CMOS. - Yoichi Kawano; Toshihide Suzuki; Masaru Sato 001; Tatsuya Hirose; Kazukiyo Joshin (ISSCC, 2009)

Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager. - Masaru Sato 001; Tatsuya Hirose; Koji Mizuno (IEICE Trans. Electron., 2009)

A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors. - Ning Li 009; Keigo Bunsen; Naoki Takayama; Qinghong Bu; Toshihide Suzuki; Masaru Sato 001; Tatsuya Hirose; Kenichi Okada 001; Akira Matsuzawa (ESSCIRC, 2010)

A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors. - Ning Li 009; Keigo Bunsen; Naoki Takayama; Qinghong Bu; Toshihide Suzuki; Masaru Sato 001; Yoichi Kawano; Tatsuya Hirose; Kenichi Okada 001; Akira Matsuzawa (IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2012)

Submillimeter-wave InP HEMT amplifiers with current-reuse topology. - Masaru Sato 001; Shoichi Shiba; Hiroshi Matsumura; Tsuyoshi Takahashi; Toshihide Suzuki; Yasuhiro Nakasha; Naoki Hara (RWS, 2013)

Millimeter-Wave GaN HEMT for Power Amplifier Applications. - Kazukiyo Joshin; Kozo Makiyama; Shiro Ozaki; Toshihiro Ohki; Naoya Okamoto; Yoshitaka Niida; Masaru Sato 001; Satoshi Masuda; Keiji Watanabe (IEICE Trans. Electron., 2014)

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. - Shoichi Shiba; Masaru Sato 001; Hiroshi Matsumura; Yoichi Kawano; Tsuyoshi Takahashi; Toshihide Suzuki; Yasuhiro Nakasha; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2015)

300-GHz Amplifier in 75-nm InP HEMT Technology. - Hiroshi Matsumura; Yoichi Kawano; Shoichi Shiba; Masaru Sato 001; Toshihide Suzuki; Yasuhiro Nakasha; Tsuyoshi Takahashi; Kozo Makiyama; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2016)

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. - Masaru Sato 001; Yoshitaka Niida; Toshihide Suzuki; Yasuhiro Nakasha; Yoichi Kawano; Taisuke Iwai; Naoki Hara; Kazukiyo Joshin (IEICE Trans. Electron., 2017)

Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves. - Tsuyoshi Takahashi; Kenichi Kawaguchi; Masaru Sato 001; Michihiko Suhara; Naoya Okamoto (ESSDERC, 2019)

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz. - Shinpei Yamashita; Michihiko Suhara; Kenichi Kawaguchi; Tsuyoshi Takahashi; Masaru Sato 001; Naoya Okamoto; Kiyoto Asakawa (IEICE Trans. Electron., 2019)

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers. - Masaru Sato 001; Yoshitaka Niida; Atsushi Yamada; Junji Kotani; Shiro Ozaki; Toshihiro Ohki; Naoya Okamoto; Norikazu Nakamura (IEICE Trans. Electron., 2021)

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. - Masaru Sato 001; Yusuke Kumazaki; Naoya Okamoto; Toshihiro Ohki; Naoko Kurahashi; Masato Nishimori; Atsushi Yamada; Junji Kotani; Naoki Hara; Keiji Watanabe (IEICE Trans. Electron., 2023)

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. - Yusuke Kumazaki; Shiro Ozaki; Naoya Okamoto; Naoki Hara; Yasuhiro Nakasha; Masaru Sato 001; Toshihiro Ohki (IEICE Trans. Electron., 2023)

An X-band Spatial Power Combining Using Rectangular Waveguide with Dielectric Lens. - Takuma Kinoshita; Yuki Shinhama; Masaru Sato 001; Futoshi Kuroki (RWS, 2024)

A 9.3% PAE, 9.2-dBm POUT power amplifier and -1.9-dB Gc upconverting mixer using InP-based MOS HEMTs for 300-GHz phased-array transmitters. - Yasuhiro Nakasha; Shiro Ozaki; Yusuke Kumazaki; Naoya Okamoto; Shoichi Shiba; Masaru Sato 001; Naoki Hara; Toshihiro Ohki (IEICE Electron. Express, 2025)