Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period. - Riichiro Shirota; Bo-Jun Yang; Yung-Yueh Chiu; Yu-Ting Wu; Pin-Yao Wang; Jung-Ho Chang; Masaru Yano; Minoru Aoki; Toshiaki Takeshita; C.-Y. Wang; Ikuo Kurachi (IRPS, 2015)