7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology. - Mario Sako; Yoshihisa Watanabe; Takao Nakajima; Jumpei Sato; Kazuyoshi Muraoka; Masaki Fujiu; Fumihiro Kouno; Michio Nakagawa; Masami Masuda; Koji Kato; Yuri Terada; Yuki Shimizu; et al. (ISSCC, 2015)

A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology. - Mario Sako; Yoshihisa Watanabe; Takao Nakajima; Jumpei Sato; Kazuyoshi Muraoka; Masaki Fujiu; Fumihiro Kono; Michio Nakagawa; Masami Masuda; Koji Kato; Yuri Terada; Yuki Shimizu; et al. (IEEE J. Solid State Circuits, 2016)

A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology. - Chang Hua Siau; Kwang-Ho Kim; Seungpil Lee; Katsuaki Isobe; Noboru Shibata; Kapil Verma; Takuya Ariki; Jason Li 001; Jong Yuh; Anirudh Amarnath; Qui Nguyen; Ohwon Kwon; et al. (ISSCC, 2019)

13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs. - Toshiyuki Kouchi; Noriyasu Kumazaki; Masashi Yamaoka; Sanad Bushnaq; Takuyo Kodama; Yuki Ishizaki; Yoko Deguchi; Akio Sugahara; Akihiro Imamoto; Norichika Asaoka; Ryosuke Isomura; Takaya Handa; et al. (ISSCC, 2020)