High reliability electron-ejection method for high density flash memories. - Takayuki Kawahara; Naoki Miyamoto; Syun-ichi Saeki; Yusuke Jyouno; Masataka Kato; Katsutaka Kimura (IEEE J. Solid State Circuits, 1995)

Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories. - Takayuki Kawahara; Takashi Kobayashi 002; Yusuke Jyouno; Syun-ichi Saeki; Naoki Miyamoto; T. Adachi; Masataka Kato; Akihiko Sato; J. Yugami; Hitoshi Kume; Katsutaka Kimura (IEEE J. Solid State Circuits, 1996)

A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications. - Atsushi Nozoe; Hiroaki Kotani; Tetsuya Tsujikawa; Keiichi Yoshida; Kazunori Furusawa; Masataka Kato; Toshiaki Nishimoto; Hitoshi Kume; Hideaki Kurata; Naoki Miyamoto; Shoji Kubono; Michitaro Kanamitsu; et al. (IEEE J. Solid State Circuits, 1999)

A 126.6-mm2 AND-type 512-Mb flash memory with 1.8-V power supply. - Tatsuya Ishii; Kazuyoshi Oshima; Hiroshi Sato; Satoshi Noda; Jiro Kishimoto; Hiroaki Kotani; Atsushi Nozoe; Kazunori Furusawa; Takayuki Yoshitake; Masataka Kato; Masahito Takahashi; Akihiko Sato; et al. (IEEE J. Solid State Circuits, 2001)