A 30-ns 64-Mb DRAM with built-in self-test and self-repair function. - Akira Tanabe; Toshio Takeshima; Hiroki Koike; Yoshiharu Aimoto; Masahide Takada; Toshiyuki Ishijima; Naoki Kasai; Hiromitsu Hada; Kentaro Shibahara; Takemitsu Kunio; Takaho Tanigawa; Takanori Saeki; et al. (IEEE J. Solid State Circuits, 1992)

A 250-Mb/s/pin, 1-Gb double-data-rate SDRAM with a bidirectional delay and an interbank shared redundancy scheme. - Yasuhiro Takai; Mamoru Fujita; Kyoichi Nagata; Satoshi Isa; Shigeyuki Nakazawa; Atsunori Hirobe; Hiroaki Ohkubo; Masato Sakao; Shinichi Horiba; Tadashi Fukase; Yoshihiro Takaishi; Makoto Matsuo; et al. (IEEE J. Solid State Circuits, 2000)

Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor. - Yasushi Yamagata; Hiroki Shirai; Hirotoshi Sugimura; S. Arai; Tomoko Wake; Ken Inoue; Takashi Sakoh; Masato Sakao; Takaho Tanigawa (CICC, 2006)