A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput. - Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; et al. (ISSCC, 2006)

A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology. - Takahiko Hara; Koichi Fukuda; Kazuhisa Kanazawa; Noboru Shibata; Koji Hosono; Hiroshi Maejima; Michio Nakagawa; Takumi Abe; Masatsugu Kojima; Masaki Fujiu; Yoshiaki Takeuchi; Kazumi Amemiya; et al. (IEEE J. Solid State Circuits, 2006)

A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. - Ken Takeuchi; Yasushi Kameda; Susumu Fujimura; Hiroyuki Otake; Koji Hosono; Hitoshi Shiga; Yoshihisa Watanabe; Takuya Futatsuyama; Yoshihiko Shindo; Masatsugu Kojima; Makoto Iwai; Masanobu Shirakawa; et al. (IEEE J. Solid State Circuits, 2007)

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology. - Kazushige Kanda; Masaru Koyanagi; Toshio Yamamura; Koji Hosono; Masahiro Yoshihara; Toru Miwa; Yosuke Kato; Alex Mak; Siu Lung Chan; Frank Tsai; Raul Cernea; Binh Le; et al. (ISSCC, 2008)

A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. - Noboru Shibata; Kazushige Kanda; Toshiki Hisada; Katsuaki Isobe; Manabu Sato; Yui Shimizu; Takahiro Shimizu; Takahiro Sugimoto; Tomohiro Kobayashi; Kazuko Inuzuka; Naoaki Kanagawa; Yasuyuki Kajitani; et al. (ISSCC, 2012)

A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface. - Kazushige Kanda; Noboru Shibata; Toshiki Hisada; Katsuaki Isobe; Manabu Sato; Yui Shimizu; Takahiro Shimizu; Takahiro Sugimoto; Tomohiro Kobayashi; Naoaki Kanagawa; Yasuyuki Kajitani; Takeshi Ogawa; et al. (IEEE J. Solid State Circuits, 2013)

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology. - Hiroshi Maejima; Kazushige Kanda; Susumu Fujimura; Teruo Takagiwa; Susumu Ozawa; Jumpei Sato; Yoshihiko Shindo; Manabu Sato; Naoaki Kanagawa; Junji Musha; Satoshi Inoue; Katsuaki Sakurai; et al. (ISSCC, 2018)

A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology. - Noboru Shibata; Kazushige Kanda; Takahiro Shimizu; Jun Nakai; Osamu Nagao; Naoki Kobayashi 004; Makoto Miakashi; Yasushi Nagadomi; Takeshi Nakano; Takahisa Kawabe; Taira Shibuya; Mario Sako; et al. (ISSCC, 2019)

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology. - Noboru Shibata; Takahisa Kawabe; Taira Shibuya; Mario Sako; Kosuke Yanagidaira; Toshifumi Hashimoto; Hiroki Date; Manabu Sato; Tomoki Nakagawa; Junji Musha; Takatoshi Minamoto; Kazushige Kanda; et al. (IEEE J. Solid State Circuits, 2020)

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology. - Tsutomu Higuchi; Takuyo Kodama; Koji Kato; Ryo Fukuda; Naoya Tokiwa; Mitsuhiro Abe; Teruo Takagiwa; Yuki Shimizu; Junji Musha; Katsuaki Sakurai; Jumpei Sato; Tetsuaki Utsumi; et al. (ISSCC, 2021)