Characterization of Trench MOS Gate Structures Utilizing Photon Emission Microscopy. - Masanori Usui; Takahide Sugiyama; Masayasu Ishiko; Jun Morimoto; Hirokazu Saitoh; Masaki Ajioka (Microelectron. Reliab., 2002)

Investigation of IGBT turn-on failure under high applied voltage operation. - Masayasu Ishiko; Koji Hotta; Sachiko Kawaji; Takahide Sugiyama; Tomoyuki Shouji; Takeshi Fukami; Kimimori Hamada (Microelectron. Reliab., 2004)

Effects of uni-axial mechanical stress on IGBT characteristics. - Masanori Usui; Masayasu Ishiko; Koji Hotta; Satoshi Kuwano; Masato Hashimoto (Microelectron. Reliab., 2005)

Design concept for wire-bonding reliability improvement by optimizing position in power devices. - Masayasu Ishiko; Masanori Usui; Takashi Ohuchi; Mikio Shirai (Microelectron. J., 2006)