A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C. - Takahiro Shimoi; Ken Matsubara; Tomoya Saito; Tomoya Ogawa; Yasuhiko Taito; Yoshinobu Kaneda; Masayuki Izuna; Koichi Takeda; Hidenori Mitani; Takashi Ito; Takashi Kono (VLSI Technology and Circuits, 2022)

15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs. - Tomoya Ogawa; Ken Matsubara; Yasuhiko Taito; Tomoya Saito; Masayuki Izuna; Koichi Takeda; Yoshinobu Kaneda; Takahiro Shimoi; Hidenori Mitani; Takashi Ito; Takashi Kono (ISSCC, 2024)

A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C. - Takahiro Shimoi; Ken Matsubara; Tomoya Saito; Tomoya Ogawa; Yasuhiko Taito; Yoshinobu Kaneda; Masayuki Izuna; Koichi Takeda; Hidenori Mitani; Takashi Ito; Takashi Kono (IEEE J. Solid State Circuits, 2024)