A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F2 High Speed Memory. - Shoichi Kabuyanagi; Takamasa Hamai; Masayuki Murase; Takeru Maeda; Masumi Saitoh; Shosuke Fujii (VLSI Technology and Circuits, 2024)