Sensitivity Analysis for Device Design. - Antonio Gnudi; Paolo Ciampolini; Roberto Guerrieri; Massimo Rudan; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1987)

A new discretization strategy of the semiconductor equations comprising momentum and energy balance. - Alessandro Forghieri; Roberto Guerrieri; Paolo Ciampolini; Antonio Gnudi; Massimo Rudan; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1988)

Adaptive mesh generation preserving the quality of the initial grid. - Paolo Ciampolini; Alessandro Forghieri; Anna Pierantoni; Antonio Gnudi; Massimo Rudan; Giorgio Baccarani (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1989)

Three-dimensional simulation of VLSI structures. - Paolo Ciampolini; Anna Pierantoni; Massimo Rudan; Giorgio Baccarani (Eur. Trans. Telecommun., 1990)

Investigation of non-local transport phenomena in small semiconductor devices. - Antonio Gnudi; Farouk Odeh; Massimo Rudan (Eur. Trans. Telecommun., 1990)

Boundary fitted coordinated generation for device analysis on composite and complicated geometries. - Zsolt Miklós Kovács-Vajna; Massimo Rudan (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1991)

Hydrodynamic simulation of impact-ionization effects in p-n junctions. - Wolfgang Quade; Massimo Rudan; Eckehard Schöll (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1991)

Numerical simulation of optical devices. - Maria Cristina Vecchi; Massimo Rudan; Giovanni Soncini (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993)

On the Structure and Closure-Condition of the Hydrodynamic Model. - Massimo Rudan; Giorgio Baccarani (VLSI Design, 1995)

Device simulation for smart integrated systems (DESSIS). - Giorgio Baccarani; Massimo Rudan; M. Lorenzini; Wolfgang Fichtner; J. Litsios; A. Schenk; P. Van Staa; L. Kaeser; A. Kampmann; A. Marmiroli; C. Sala; E. Ravanelli (ICECS, 1996)

AC analysis of amorphous silicon devices. - Aurelio Pellegrini; Luigi Colalongo; Marina Valdinoci; Massimo Rudan (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1996)

An efficient solution scheme for the spherical-harmonics expansion of the Boltzmann transport equation [MOS transistors]. - Maria Cristina Vecchi; Jan Mohring; Massimo Rudan (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1997)

Recent Advances in Device Simulation Using Standard Transport Models. - Giorgio Baccarani; Massimo Rudan; M. Lorenzini; C. Sala (VLSI Design, 1998)

Monte Carlo Analysis of Anisotropy in the Transport Relaxation Times for the Hydrodynamic Model. - Rossella Brunetti; Maria Cristina Vecchi; Massimo Rudan (VLSI Design, 1998)

Transient Analysis of Silicon Devices Using the Hydrodynamic Model. - Luigi Colalongo; Marina Valdinoci; Antonio Gnudi; Massimo Rudan (VLSI Design, 1998)

Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE. - Susanna Reggiani; Maria Cristina Vecchi; Massimo Rudan (VLSI Design, 1998)

An Efficient Solution Scheme for the Spherical-Harmonics Expansion of the Boltzmann Transport Equation Applied to Two-Dimensional Devices. - Maria Cristina Vecchi; Jan Mohring; Massimo Rudan (VLSI Design, 1998)

An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices. - Susanna Reggiani; Marina Valdinoci; Luigi Colalongo; Massimo Rudan; Giorgio Baccarani (VLSI Design, 2000)

Calculation of Transport Parameters of SiO2 Polymorphs. - Elena Gnani; Susanna Reggiani; Renato Colle; Massimo Rudan (VLSI Design, 2001)

Automatic 2-D and 3-D simulation of parasitic structures insmart-power integrated circuits. - Elena Gnani; Vincenzo Giudicissi; Radu Vissarion; Claudio Contiero; Massimo Rudan (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2002)

Modeling the dynamic self-heating of PCM. - Giuliano Marcolini; Fabio Giovanardi; Massimo Rudan; Fabrizio Buscemi; Enrico Piccinini; Rossella Brunetti; Andrea Cappelli (ESSDERC, 2013)

Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides. - Enrico Piccinini; Massimo Rudan; Fabrizio Buscemi; Rossella Brunetti (ESSDERC, 2014)

Closed-form transition rate in hopping conduction. - Enrico Piccinini; Massimo Rudan; Rossella Brunetti (ESSDERC, 2016)

An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems. - Manel Hammami; Gabriele Grandi; Massimo Rudan (IECON, 2016)