A Novel Induced Offset Voltage Sensor for Separable Wear-Out Mechanism Characterization in a 12nm FinFET Process. - Ian Hill; Mateo Rendón; André Ivanov (IRPS, 2024)

Enhanced Wear-Out Sensor Design in a 12nm Process for Separable Stress Regime Monitoring. - Ian Hill; Mateo Rendón; André Ivanov (VTS, 2024)

Gate Leakage Current Integration-Based Dielectric Breakdown Monitor in a 12nm FinFET Process. - Mateo Rendón; Ian Hill; André Ivanov (VTS, 2025)