Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges. - Erlend G. Rolseth; Andreas Blech; Inga A. Fischer; Youssef Hashad; Roman Koerner; Konrad Kostecki; Aleksei Kruglov; V. S. Senthil Srinivasan; Mathias Weiser; Torsten Wendav; Kurt Busch; Jörg Schulze (MIPRO, 2017)

Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy. - Mathias C. J. Weiser; Daniel Schwarz; Hannes S. Funk; David Weißhaupt; C. Serra; Jörg Schulze; Stefano Chiussi (MIPRO, 2019)