Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. - Matteo Borga; Matteo Meneghini; Steve Stoffels; Marleen Van Hove; M. Zhao; X. Li; Stefaan Decoutere; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2018)

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. - Eleonora Canato; Fabrizio Masin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Arno Stockman; Abhishek Banerjee 003; Peter Moens (IRPS, 2019)

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. - Eric E. Fabris; Matteo Meneghini; Carlo De Santi; Matteo Borga; Gaudenzio Meneghesso; Enrico Zanoni; Y. Kinoshita; Kenichiro Tanaka; H. Ishida; Tetsuzo Ueda (IRPS, 2019)

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). - Maria Ruzzarin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Dong Ji; Wenwen Li; Silvia H. Chan; Anchal Agarwal; Chirag Gupta; Stacia Keller; Umesh K. Mishra; et al. (IRPS, 2019)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. - Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot; Andrea Natale Tallarico; Enrico Sangiorgi; Claudio Fiegna; J. Zheng; X. Ma; Matteo Borga; Elena Fabris; Matteo Meneghini; et al. (IRPS, 2019)

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. - Kalparupa Mukherjee; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Shuzhen You; Karen Geens; Matteo Borga; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2020)

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. - Elena Fabris; Matteo Borga; Niels Posthuma; Ming Zhao; Brice De Jaeger; Shuzhen You; Stefaan Decoutere; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (IRPS, 2021)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. - Davide Favero; Carlo De Santi; Kalparupa Mukherjee; Karen Geens; Matteo Borga; Benoit Bakeroot; Shuzhen You; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. - M. Millesimo; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna; Andrea Natale Tallarico (IRPS, 2022)

Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology. - Andrea Bettini; Thibault Cosnier; Alessandro Magnani; Olga Syshchyk; Matteo Borga; Stefaan Decoutere; Andrea Neviani (PRIME, 2022)

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. - Davide Favero; A. Cavaliere; Carlo De Santi; Matteo Borga; W. Gonçalez Filho; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2023)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. - M. Millesimo; Claudio Fiegna; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Andrea Natale Tallarico (IRPS, 2024)

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. - M. Millesimo; L. Valentini; Claudio Fiegna; Enrico Sangiorgi; Andrea Natale Tallarico; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot (IRPS, 2025)