High brightness GaN LEDs degradation during dc and pulsed stress. - Matteo Meneghini; Simona Podda; A. Morelli; Ruggero Pintus; L. Trevisanello; Gaudenzio Meneghesso; Massimo Vanzi; Enrico Zanoni (Microelectron. Reliab., 2006)

An Analysis of the Compositional Techniques in John Chowning's Stria. - Matteo Meneghini (Comput. Music. J., 2007)

High temperature electro-optical degradation of InGaN/GaN HBLEDs. - Matteo Meneghini; Lorenzo Trevisanello; C. Sanna; Giovanna Mura; Massimo Vanzi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2007)

Reliability analysis of InGaN Blu-Ray laser diode. - Nicola Trivellin; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Kenji Orita; Masaaki Yuri; Tsuyoshi Tanaka; Daisuke Ueda (Microelectron. Reliab., 2009)

Defect-related degradation of Deep-UV-LEDs. - Matteo Meneghini; Diego Barbisan; Y. Bilenko; Maxim S. Shatalov; J. Yang; R. Gaska; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2010)

Reliability evaluation for Blu-Ray laser diodes. - Matteo Meneghini; Nicola Trivellin; Kenji Orita; Masaaki Yuri; Tsuyoshi Tanaka; Daisuke Ueda; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2010)

Degradation mechanisms of high-power white LEDs activated by current and temperature. - Matteo Dal Lago; Matteo Meneghini; Nicola Trivellin; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2011)

Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency. - Nicola Trivellin; Matteo Meneghini; Carlo De Santi; Simone Vaccari; Gaudenzio Meneghesso; Enrico Zanoni; Kenji Orita; S. Takigawa; Tsuyoshi Tanaka; Daisuke Ueda (Microelectron. Reliab., 2011)

Phosphors for LED-based light sources: Thermal properties and reliability issues. - Matteo Dal Lago; Matteo Meneghini; Nicola Trivellin; Giovanna Mura; Massimo Vanzi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2012)

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. - Paul Marko; Matteo Meneghini; Sergey Bychikhin; Denis Marcon; Gaudenzio Meneghesso; Enrico Zanoni; Dionyz Pogany (Microelectron. Reliab., 2012)

Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress. - Matteo Meneghini; Matteo Dal Lago; L. Rodighiero; Nicola Trivellin; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2012)

Chip and package-related degradation of high power white LEDs. - Matteo Meneghini; Matteo Dal Lago; Nicola Trivellin; Giovanna Mura; Massimo Vanzi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2012)

Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. - Isabella Rossetto; Matteo Meneghini; Tiziana Tomasi; Dai Yufeng; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2012)

Single- and double-heterostructure GaN-HEMTs devices for power switching applications. - Alberto Zanandrea; Eldad Bahat-Treidel; Fabiana Rampazzo; Antonio Stocco; Matteo Meneghini; Enrico Zanoni; Oliver Hilt; Ponky Ivo; Joachim Würfl; Gaudenzio Meneghesso (Microelectron. Reliab., 2012)

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. - Davide Bisi; Matteo Meneghini; Antonio Stocco; Giulia Cibin; Alessio Pantellini; Antonio Nanni; Claudio Lanzieri; Enrico Zanoni; Gaudenzio Meneghesso (ESSDERC, 2013)

Thermal and electrical investigation of the reverse bias degradation of silicon solar cells. - Alessandro Compagnin; Matteo Meneghini; Marco Barbato; Valentina Giliberto; Andrea Cester; Massimo Vanzi; Giovanna Mura; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2013)

"Hot-plugging" of LED modules: Electrical characterization and device degradation. - Matteo Dal Lago; Matteo Meneghini; Nicola Trivellin; Giovanna Mura; Massimo Vanzi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2013)

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. - Isabella Rossetto; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2013)

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. - Isabella Rossetto; Fabiana Rampazzo; Riccardo Silvestri; Alberto Zanandrea; Christian Dua; Sylvain L. Delage; Mourad Oualli; Matteo Meneghini; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2013)

Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes. - Carlo De Santi; Matteo Meneghini; S. Carraro; Simone Vaccari; Nicola Trivellin; Stefania Marconi; Michael Marioli; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2013)

ESD characterization of multi-chip RGB LEDs. - Simone Vaccari; Matteo Meneghini; Alessio Griffoni; Diego Barbisan; Marco Barbato; S. Carraro; Marco La Grassa; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2013)

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. - Davide Bisi; Antonio Stocco; Matteo Meneghini; Fabiana Rampazzo; Andrea Cester; Gaudenzio Meneghesso; Enrico Zanoni (ESSDERC, 2014)

Breakdown investigation in GaN-based MIS-HEMT devices. - Fabio Alessio Marino; Davide Bisi; Matteo Meneghini; Giovanni Verzellesi; Enrico Zanoni; Marleen Van Hove; Shuzhen You; Stefaan Decoutere; Denis Marcon; Steve Stoffels; Nicolo Ronchi; Gaudenzio Meneghesso (ESSDERC, 2014)

High performance high reliability AlN/GaN DHFET. - Farid Medjdoub; Etienne Okada; Bertrand Grimbert; Damien Ducatteau; Riccardo Silvestri; Matteo Meneghini; Enrico Zanoni; Gaudenzio Meneghesso (ESSDERC, 2014)

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. - Isabella Rossetto; Fabiana Rampazzo; Simone Gerardin; Matteo Meneghini; Marta Bagatin; Alberto Zanandrea; Alessandro Paccagnella; Gaudenzio Meneghesso; Enrico Zanoni; Christian Dua; Marie-Antoinette di Forte-Poisson; Raphael Aubry; et al. (ESSDERC, 2014)

Traps localization and analysis in GaN HEMTs. - Alessandro Chini; Fabio Soci; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (Microelectron. Reliab., 2014)

ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms. - Matteo Dal Lago; Matteo Meneghini; Carlo De Santi; Marco Barbato; Nicola Trivellin; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements. - Matteo Meneghini; Simone Vaccari; Matteo Dal Lago; Stefano Marconi; Marco Barbato; Nicola Trivellin; Alessio Griffoni; Alberto Alfier; Giovanni Verzellesi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. - Isabella Rossetto; Fabiana Rampazzo; Matteo Meneghini; Marco Silvestri; Christian Dua; Piero Gamarra; Raphael Aubry; Marie-Antoinette di Forte-Poisson; O. Patard; Sylvain L. Delage; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage. - Carlo De Santi; Matteo Meneghini; Michael Marioli; Matteo Buffolo; Nicola Trivellin; T. Weig; K. Holc; K. Köhler; J. Wagner; U. T. Schwarz; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. - Antonio Stocco; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Proton induced trapping effect on space compatible GaN HEMTs. - Antonio Stocco; Simone Gerardin; Davide Bisi; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Trapping induced parasitic effects in GaN-HEMT for power switching applications. - Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Piet Vanmeerbeek; Peter Moens (ICICDT, 2015)

Stress-induced instabilities of shunt paths in high efficiency MWT solar cells. - Marco Barbato; Matteo Meneghini; Andrea Cester; Alessandro Barbato; Enrico Zanoni; Gaudenzio Meneghesso; Giovanna Mura; Diego Tonini; A. Voltan; Giorgio Cellere (IRPS, 2015)

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. - Matteo Meneghini; Riccardo Silvestri; Stefano Dalcanale; Davide Bisi; Enrico Zanoni; Gaudenzio Meneghesso; Piet Vanmeerbeek; Abhishek Banerjee 003; Peter Moens (IRPS, 2015)

Modeling challenges for high-efficiency visible light-emitting diodes. - Francesco Bertazzi; Stefano Dominici; Marco Mandurrino; Dipika Robidas; Xiangyu Zhou; Marco Vallone; Marco Calciati; Pierluigi Debernardi; Giovanni Verzellesi; Matteo Meneghini; Enrico Bellotti; Giovanni Ghione; et al. (RTSI, 2015)

Analysis of the mechanisms limiting the reliability of retrofit LED lamps. - Carlo De Santi; Matteo Dal Lago; Matteo Buffolo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (RTSI, 2015)

Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting. - Nicola Trivellin; Matteo Meneghini; Marco Ferretti; Diego Barbisan; Matteo Dal Lago; Gaudenzio Meneghesso; Enrico Zanoni (RTSI, 2015)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)

Long-term degradation mechanisms of mid-power LEDs for lighting applications. - Matteo Buffolo; Carlo De Santi; Matteo Meneghini; D. Rigon; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2015)

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. - Marco La Grassa; Matteo Meneghini; Carlo De Santi; Marco Mandurrino; Michele Goano; Francesco Bertazzi; Roland Zeisel; Bastian Galler; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2015)

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. - Isabella Rossetto; Matteo Meneghini; Davide Bisi; Alessandro Barbato; Marleen Van Hove; Denis Marcon; Tian-Li Wu; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2015)

Failure causes and mechanisms of retrofit LED lamps. - Carlo De Santi; Matteo Dal Lago; Matteo Buffolo; Desiree Monti; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2015)

Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs. - Agostino Benvegnù; Sylvain Laurent; Matteo Meneghini; Raymond Quéré; Jean-Luc Roux; Enrico Zanoni; Denis Barataud (Microelectron. Reliab., 2016)

Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs. - Matteo Buffolo; Matteo Meneghini; Carlo De Santi; Henry Felber; N. Renso; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2016)

Degradation of InGaN-based LEDs related to charge diffusion and build-up. - Marco La Grassa; Matteo Meneghini; Carlo De Santi; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2016)

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. - Gaudenzio Meneghesso; Matteo Meneghini; Davide Bisi; Isabella Rossetto; Tian-Li Wu; Marleen Van Hove; Denis Marcon; Steve Stoffels; Stefaan Decoutere; Enrico Zanoni (Microelectron. Reliab., 2016)

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. - Matteo Meneghini; Oliver Hilt; Clément Fleury; Riccardo Silvestri; Mattia Capriotti; Gottfried Strasser; Dionyz Pogany; Eldad Bahat-Treidel; Frank Brunner; A. Knauer; Joachim Würfl; Isabella Rossetto; et al. (Microelectron. Reliab., 2016)

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. - Isabella Rossetto; Matteo Meneghini; Vanessa Rizzato; Maria Ruzzarin; Andrea Favaron; Steve Stoffels; Marleen Van Hove; Niels Posthuma; Tian-Li Wu; Denis Marcon; Stefaan Decoutere; Gaudenzio Meneghesso; et al. (Microelectron. Reliab., 2016)

Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes. - Carlo De Santi; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2016)

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. - Arno Stockman; Michael J. Uren; Alaleh Tajalli; Matteo Meneghini; Benoit Bakeroot; Peter Moens (ESSDERC, 2017)

Long-term degradation of InGaN-based laser diodes: Role of defects. - Desiree Monti; Matteo Meneghini; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Agata Bojarska; Piotr Perlin (Microelectron. Reliab., 2017)

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density. - N. Renso; Matteo Meneghini; Matteo Buffolo; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2017)

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. - Isabella Rossetto; Matteo Meneghini; Eleonora Canato; Marco Barbato; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Andrea Natale Tallarico; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2017)

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. - Carlo De Santi; Matteo Meneghini; Alessandro Caria; E. Dogmus; M. Zegaoui; F. Medjdoub; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2017)

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. - Alaleh Tajalli; Matteo Meneghini; Isabella Rossetto; Peter Moens; Abhishek Banerjee 003; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2017)

Degradation of vertical GaN FETs under gate and drain stress. - Maria Ruzzarin; Matteo Meneghini; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Min Sun; Tomás Palacios (IRPS, 2018)

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. - Arno Stockman; Eleonora Canato; Alaleh Tajalli; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Benoit Bakeroot (IRPS, 2018)

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. - Matteo Borga; Matteo Meneghini; Steve Stoffels; Marleen Van Hove; M. Zhao; X. Li; Stefaan Decoutere; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2018)

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits. - Matteo Buffolo; M. Pietrobon; Carlo De Santi; F. Samparisi; Michael L. Davenport; John E. Bowers 001; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (Microelectron. Reliab., 2018)

Degradation of GaN-on-GaN vertical diodes submitted to high current stress. - Eric E. Fabris; Matteo Meneghini; Carlo De Santi; Zongyang Hu; Wenshen Li; Kazuki Nomoto; Debdeep Jena; Huili Grace Xing; Xiang Gao; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2018)

Positive and negative threshold voltage instabilities in GaN-based transistors. - Gaudenzio Meneghesso; Matteo Meneghini; Carlo De Santi; Maria Ruzzarin; Enrico Zanoni (Microelectron. Reliab., 2018)

Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes. - Desiree Monti; Matteo Meneghini; Carlo De Santi; Agata Bojarska; Piotr Perlin; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2018)

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress. - N. Renso; Matteo Buffolo; Carlo De Santi; Matteo Ronzani; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (Microelectron. Reliab., 2018)

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. - Maria Ruzzarin; Matteo Meneghini; Carlo De Santi; Min Sun; Tomás Palacios; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2018)

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. - Mehdi Rzin; Alessandro Chini; Carlo De Santi; Matteo Meneghini; A. Hugger; Marc Hollmer; H. Stieglauer; M. Madel; J. Splettstößer; Daniel Sommer; Jan Grünenpütt; K. Beilenhoff; et al. (Microelectron. Reliab., 2018)

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. - Alaleh Tajalli; Eleonora Canato; Arianna Nardo; Matteo Meneghini; Arno Stockman; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2018)

Current induced degradation study on state of the art DUV LEDs. - Nicola Trivellin; Desiree Monti; Carlo De Santi; Matteo Buffolo; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (Microelectron. Reliab., 2018)

Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project. - Nicola Trivellin; Diego Barbisan; Denis Badocco; Paolo Pastore; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Giuseppe Belgioioso; Angelo Cenedese (Sensors, 2018)

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. - Eleonora Canato; Fabrizio Masin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Arno Stockman; Abhishek Banerjee 003; Peter Moens (IRPS, 2019)

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. - Eric E. Fabris; Matteo Meneghini; Carlo De Santi; Matteo Borga; Gaudenzio Meneghesso; Enrico Zanoni; Y. Kinoshita; Kenichiro Tanaka; H. Ishida; Tetsuzo Ueda (IRPS, 2019)

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). - Maria Ruzzarin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Dong Ji; Wenwen Li; Silvia H. Chan; Anchal Agarwal; Chirag Gupta; Stacia Keller; Umesh K. Mishra; et al. (IRPS, 2019)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. - Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot; Andrea Natale Tallarico; Enrico Sangiorgi; Claudio Fiegna; J. Zheng; X. Ma; Matteo Borga; Elena Fabris; Matteo Meneghini; et al. (IRPS, 2019)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; A. Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IRPS, 2019)

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. - Fabrizio Masin; Matteo Meneghini; Eleonora Canato; Alessandro Barbato; Carlo De Santi; Arno Stockman; Abhishek Banerjee 003; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (IRPS, 2020)

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. - Kalparupa Mukherjee; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Shuzhen You; Karen Geens; Matteo Borga; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2020)

Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. - Nicolò Zagni; Alessandro Chini; Francesco Maria Puglisi; Paolo Pavan; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Giovanni Verzellesi (IRPS, 2020)

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. - Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Fabiana Rampazzo; Daniele Marcon; Veronica Gao Zhan; Francesca Chiocchetta; Andreas Graff; Frank Altmann; Michél Simon-Najasek; David Poppitz (IRPS, 2020)

Charge Trapping in GaN Power Transistors: Challenges and Perspectives. - Matteo Meneghini; Nicola Modolo; Arianna Nardo; Carlo De Santi; Andrea Minetto; Luca Sayadi; Christian Koller; Sebastien Sicre; Gerhard Prechtl; Gaudenzio Meneghesso; Enrico Zanoni (BCICTS, 2021)

Current crowding as a major cause for InGaN LED degradation at extreme high current density. - Nicola Trivellin; Matteo Buffolo; Carlo De Santi; Enrico Zanoni; Gaudenzio Meneghesso; Matteo Meneghini (IECON, 2021)

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. - Francesca Chiocchetta; Claudia Calascione; Carlo De Santi; Chandan Sharma; Fabiana Rampazzo; Xun Zheng; Brian Romanczyk; Matthew Guidry; Haoran Li; Stacia Keller; Umesh K. Mishra; Gaudenzio Meneghesso; et al. (IRPS, 2021)

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. - Elena Fabris; Matteo Borga; Niels Posthuma; Ming Zhao; Brice De Jaeger; Shuzhen You; Stefaan Decoutere; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (IRPS, 2021)

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. - Nicola Modolo; Andrea Minetto; Carlo De Santi; Luca Sayadi; Sebastien Sicre; Gerhard Prechtl; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin 006; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IRPS, 2021)

Full Optical Contactless Thermometry Based on LED Photoluminescence. - Nicola Trivellin; Matteo Buffolo; Carlo De Santi; Matteo Meneghini; Michele Forzan; Fabrizio Dughiero; Enrico Zanoni; Gaudenzio Meneghesso (IEEE Trans. Instrum. Meas., 2021)

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. - Francesca Chiocchetta; Carlo De Santi; Fabiana Rampazzo; Kalparupa Mukherjee; Jan Grünenpütt; Daniel Sommer; Hervé Blanck; Benoit Lambert; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. - Davide Favero; Carlo De Santi; Kalparupa Mukherjee; Karen Geens; Matteo Borga; Benoit Bakeroot; Shuzhen You; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. - Zhan Gao; Francesca Chiocchetta; Carlo De Santi; Nicola Modolo; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Hervé Blanck; H. Stieglauer; D. Sommer; Benoit Lambert; et al. (IRPS, 2022)

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. - Fabrizio Masin; Carlo De Santi; Arno Stockman; J. Lettens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Matteo Meneghini (IRPS, 2022)

Modeling Hot-Electron Trapping in GaN-based HEMTs. - Nicola Modolo; Carlo De Santi; Andrea Minetto; Luca Sayadi; Sebastien Sicre; Gerhard Prechtl; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. - Davide Favero; A. Cavaliere; Carlo De Santi; Matteo Borga; W. Gonçalez Filho; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2023)

Trapping in $ text{Al}_{2} mathrm{O}_{3}/ text{GaN}$ MOScaps investigated by fast capacitive techniques. - Manuel Fregolent; Alberto Marcuzzi; Carlo De Santi; Eldad Bahat-Treidel; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2023)

Thermally-activated failure mechanisms of 0.25 mu mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. - Zhan Gao; Francesca Chiocchetta; Fabiana Rampazzo; Carlo De Santi; Mirko Fornasier; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (IRPS, 2023)

Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes. - Alexander Herzog; Simon Benkner; Babak Zandi; Matteo Buffolo; Willem D. van Driel; Matteo Meneghini; Tran Quoc Khanh (IEEE Access, 2023)

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. - M. Avramenko; L. De Schepper; J.-F. Cano; F. Geenen; Peter Moens; Alberto Marcuzzi; Carlo De Santi; Matteo Meneghini (IRPS, 2024)

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. - Mirco Boito; Manuel Fregolent; Carlo De Santi; A. Abbisogni; S. Smerzi; Isabella Rossetto; Ferdinando Iucolano; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs. - A. Cavaliere; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

$ mathrm{R}_{ text{ON}}$ and $ mathrm{V}_{ text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. - Davide Favero; Carlo De Santi; Arno Stockman; Arianna Nardo; Piet Vanmeerbeek; Marnix Tack; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. - Alberto Marcuzzi; M. Avramenko; Carlo De Santi; Peter Moens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. - Marco Saro; Francesco de Pieri; Andrea Carlotto; Mirko Fornasier; Fabiana Rampazzo; Carlo De Santi; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Davide Bisi; Matthew Guidry; Stacia Keller; et al. (IRPS, 2024)

Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate. - Riccardo Fraccaroli; Matteo Dell'Andrea; Manuel Fregolent; Mirco Boito; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Eleonora Canato; Isabella Rossetto; Alessio Pirani; Giansalvo Pizzo; Cristina Miccoli; et al. (IRPS, 2025)

Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias. - S. L. Longato; Davide Favero; Arno Stockman; Arianna Nardo; Piet Vanmeerbeek; Marnix Tack; Gaudenzio Meneghesso; Enrico Zanoni; C. De Santi; Matteo Meneghini (IRPS, 2025)

Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress. - Alberto Marcuzzi; M. Avramenko; Carlo De Santi; Peter Moens; G. J. Gomez Garcia; A. Feng; T. Grasser; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2025)

Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $ mu mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications. - Francesco de Pieri; Manuel Fregolent; Marco Saro; Andrea Carlotto; Mirco Boito; Carlo De Santi; Fabiana Rampazzo; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (IRPS, 2025)