E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. - Mattia Capriotti; Clément Fleury; Ole Bethge; Matteo Rigato; Suzanne Lancaster; Dionyz Pogany; Gottfried Strasser; Eldad Bahat-Treidel; Oliver Hilt; Frank Brunner; Joachim Würfl (ESSDERC, 2015)

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Mattia Capriotti; Matteo Rigato; Oliver Hilt; Joachim Würfl; Joff Derluyn; Stephan Steinhauer; Anton Köck; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2015)

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. - Matteo Rigato; Clément Fleury; Michael Heer; Mattia Capriotti; Werner Simbürger; Dionyz Pogany (Microelectron. Reliab., 2015)