On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. - William Vandendaele; Thomas Lorin; Romain Gwoziecki; Yannick Baines; Jérome Biscarrat; Marie-Anne Jaud; Charlotte Gillot; Matthew Charles; Marc Plissonnier; Gilles Reimbold (ESSDERC, 2017)

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. - Roméo Kom Kammeugne; Charles Leroux; Tadeu Mota Frutuoso; Jacques Cluzel; Laura Vauche; Cyrille Le Royer; Romain Gwoziecki; Xavier Garros; Fred Gaillard; Matthew Charles; Edwige Bano; Gérard Ghibaudo (ESSDERC, 2021)

Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN p-n Diodes Grown with Selective Area Growth. - Mohammed El Amrani; Thomas Kaltsounis; David Plaza Arguello; Stéphane Moreau; Hala El Rammouz; Matthew Charles; Julien Buckley; Daniel Alquier (IRPS, 2025)