Scaling beyond the 65 nm node with FinFET-DGCMOS. - Edward J. Nowak; Thomas Ludwig 004; Ingo Aller; Jakub Kedzierski; M. Leong; BethAnn Rainey; Matthew J. Breitwisch; V. Gemhoefer; Joachim Keinert; David M. Fried (CICC, 2003)

Ultralow-power SRAM technology. - Randy W. Mann; W. W. (Bill) Abadeer; Matthew J. Breitwisch; O. Bula; Jeff S. Brown; Bryant C. Colwill; Peter E. Cottrell; William T. Crocco Jr.; Stephen S. Furkay; Michael J. Hauser; Terence B. Hook; Dennis Hoyniak; et al. (IBM J. Res. Dev., 2003)

RFCMOS technology from 0.25μm to 65nm: the state of the art. - John J. Pekarik; David R. Greenberg; Basanth Jagannathan; Robert A. Groves; J. R. Jones; Raminderpal Singh; Anil Chinthakindi; Xudong Wang; Matthew J. Breitwisch; Douglas D. Coolbaugh; Peter E. Cottrell; John E. Florkey; et al. (CICC, 2004)

A novel CMOS compatible embedded nonvolatile memory with zero process adder. - Matthew J. Breitwisch; Chung Hon Lam; Jeffrey B. Johnson; Steven W. Mittl; Jian W. Zhu (MTDT, 2005)

Phase-change random access memory: A scalable technology. - Simone Raoux; Geoffrey W. Burr; Matthew J. Breitwisch; Charles T. Rettner; Yi-Chou Chen; Robert M. Shelby; Martin Salinga; Daniel Krebs; Shih-Hung Chen; Hsiang-Lan Lung; Chung Hon Lam (IBM J. Res. Dev., 2008)

Multilevel phase-change memory. - Nikolaos Papandreou; Aggeliki Pantazi; Abu Sebastian; Matthew J. Breitwisch; Chung Hon Lam; Haralampos Pozidis; Evangelos Eleftheriou (ICECS, 2010)

Programming algorithms for multilevel phase-change memory. - Nikolaos Papandreou; Haralampos Pozidis; Aggeliki Pantazi; Abu Sebastian; Matthew J. Breitwisch; Chung Hon Lam; Evangelos Eleftheriou (ISCAS, 2011)

Nanoscale electronic synapses using phase change devices. - Bryan L. Jackson; Bipin Rajendran; Gregory S. Corrado; Matthew J. Breitwisch; Geoffrey W. Burr; Roger Cheek; Kailash Gopalakrishnan; Simone Raoux; Charles T. Rettner; Alvaro Padilla; Alejandro G. Schrott; Rohit S. Shenoy; et al. (ACM J. Emerg. Technol. Comput. Syst., 2013)