Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $ mathrm{f}_{ mathrm{t}}=10.2$ GHz. - Matthias Sinnwell; Michael Dammann; Rachid Driad; Sebastian Krause; Stefano Leone; Michael Mikulla; Rüdiger Quay (DRC, 2023)

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. - Matthias Sinnwell; Michael Dammann; Rachid Driad; Stefano Leone; Michael Mikulla; Rüdiger Quay (DRC, 2024)