A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights. - Mattia Halter; Laura Bégon-Lours; Valeria Bragaglia; Marilyne Sousa; Bert Jan Offrein; Stefan Abel; Mathieu Luisier; Jean Fompeyrine (CoRR, 2020)

High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. - Laura Bégon-Lours; Mattia Halter; Youri Popoff; Zhenming Yu; Donato Francesco Falcone; Bert Jan Offrein (ESSDERC, 2021)

A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory. - Laura Bégon-Lours; Mattia Halter; Diana Dávila Pineda; Valeria Bragaglia; Youri Popoff; Antonio La Porta; Daniel Jubin; Jean Fompeyrine; Bert J. Offrein (IMW, 2021)

Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. - Tommaso Stecconi; Youri Popoff; Roberto Guido; Mattia Halter; Donato Francesco Falcone; Antonio La Porta; Folkert Horst; Laura Bégon-Lours; Marilyne Sousa; Bert J. Offrein; Valeria Bragaglia (DRC, 2022)

Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM. - Tommaso Stecconi; Youri Popoff; Roberto Guido; Donato Francesco Falcone; Mattia Halter; Marilyne Sousa; Folkert Horst; Antonio La Porta; Bert J. Offrein; Valeria Bragaglia (ESSDERC, 2022)

Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights. - Laura Bégon-Lours; Mattia Halter; Marilyne Sousa; Youri Popoff; Diana Dávila Pineda; Donato Francesco Falcone; Zhenming Yu; Steffen Reidt; Lorenzo Benatti; Francesco Maria Puglisi; Bert Jan Offrein (Neuromorph. Comput. Eng., 2022)

A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory. - Laura Bégon-Lours; Mattia Halter; Diana Dávila Pineda; Youri Popoff; Valeria Bragaglia; Antonio La Porta; Daniel Jubin; Jean Fompeyrine; Bert Jan Offrein (CoRR, 2023)

High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. - Laura Bégon-Lours; Mattia Halter; Youri Popoff; Zhenming Yu; Donato Francesco Falcone; Bert Jan Offrein (CoRR, 2023)