Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. - Maurizio Millesimo; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna; Andrea Natale Tallarico (IRPS, 2022)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. - Maurizio Millesimo; Claudio Fiegna; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Andrea Natale Tallarico (IRPS, 2024)

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. - Maurizio Millesimo; L. Valentini; Claudio Fiegna; Enrico Sangiorgi; Andrea Natale Tallarico; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot (IRPS, 2025)

HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack. - Andrea Natale Tallarico; Maurizio Millesimo; U. Ibrar; Enrico Sangiorgi; Claudio Fiegna; T.-Y. Yang; J.-S. Wu; H. Iwai; E.-Y. Chang (IRPS, 2025)