Si BJT and SiGe HBT performance modeling after neutron radiation exposure. - Konstantin O. Petrosyants; Eric Vologdin; Dmitry Smirnov; Rostislav Torgovnikov; Maxim V. Kozhukhov (EWDTS, 2011)

SPICE model parameters extraction taking into account the ionizing radiation effects. - Konstantin O. Petrosyants; Maxim V. Kozhukhov (EWDTS, 2014)

Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI's Components using RAD-THERM TCAD Subsystem. - Konstantin O. Petrosyants; Maxim V. Kozhukhov; Dmitry Popov (DDECS, 2019)

SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From -200 °C to +300 °C). - Konstantin O. Petrosyants; Lev M. Sambursky; Maxim V. Kozhukhov; Mamed R. Ismail-Zade; Igor A. Kharitonov; Bo Li 051 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2021)