Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage. - Maxime Berthou; P. Retailleau; Hélène Frémont; Alexandrine Guédon-Gracia; C. Jéphos-Davennel (Microelectron. Reliab., 2009)

Temperature effects on the ruggedness of SiC Schottky diodes under surge current. - Javier Leon; Xavier Perpiñà; Viorel Banu; Josep Montserrat; Maxime Berthou; Miquel Vellvehí; Philippe Godignon; Xavier Jordà (Microelectron. Reliab., 2014)

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. - Victor Soler; Maxime Berthou; Andrei Mihaila; Josep Montserrat; Philippe Godignon; José Rebollo; José Millán (ESSDERC, 2015)

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. - Victor Soler; Maria Cabello; Maxime Berthou; Josep Montserrat; José Rebollo; Philippe Godignon; Andrei Mihaila; Maria R. Rogina; Alberto Rodriguez 001; Javier Sebastián (IEEE Trans. Ind. Electron., 2017)