A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. - Paul Salmen; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Gerald Rescher; Thomas Aichinger (IRPS, 2021)

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. - Maximilian W. Feil; Hans Reisinger; André Kabakow; Thomas Aichinger; Wolfgang Gustin; Tibor Grasser (IRPS, 2022)

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. - Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Thomas Aichinger; Paul Salmen; Gerald Rescher; Wolfgang Gustin; Tibor Grasser (IRPS, 2023)

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. - Tibor Grasser; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Dominic Waldhör; A. Vasilev; Michael Waltl; Thomas Aichinger; M. Bockstedte; Wolfgang Gustin; Gregor Pobegen (IRPS, 2024)