Numerical Analysis on Phonon Localization of Vacancy Type Disordered Graphene. - Md. Sherajul Islam; Md. Tawabur Rahaman; Ashraful Ghani Bhuiyan; Akihiro Hashimoto (J. Circuits Syst. Comput., 2015)

Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio. - Kamal Hosen; Md. Sherajul Islam; Catherine Stampfl; Jeongwon Park (IEEE Access, 2021)

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET. - Abdullah Al Mamun Mazumder; Kamal Hosen; Md. Sherajul Islam; Jeongwon Park (IEEE Access, 2022)