Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. - Rajarshi Roy Chaudhuri; Vipin Joshi; Amratansh Gupta; Tanmay Joshi; Rasik Rashid Malik; Mehak Ashraf Mir; Sayak Dutta Gupta; Mayank Shrivastava (IRPS, 2023)

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. - Rasik Rashid Malik; Vipin Joshi; Rajarshi Roy Chaudhuri; Mehak Ashraf Mir; Zubear Khan; Avinas N. Shaji; Madhura Bhattacharya; Anup T. Vitthal; Mayank Shrivastava (IRPS, 2023)

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs. - Mehak Ashraf Mir; Vipin Joshi; Rajarshi Roy Chaudhuri; Mohammad Ateeb Munshi; Rasik Rashid Malik; Mayank Shrivastava (IRPS, 2023)

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. - Mehak Ashraf Mir; Anup Thakare; Mohammad Ateeb Munshi; V. Avinash; Saniya S. Wani; Zubear Khan; Rajarshi Roy Chaudhuri; Simran R. Karthik; Rasik Rashid Malik; Vipin Joshi; Mayank Shrivastava (IRPS, 2024)

Experimental Validation of Buffer Traps-Driven Electric Field Dynamics Governing Breakdown and Leakage Trends in AlGaN/GaN Heterostructures. - Rasik Rashid Malik; Simran R. Karthik; Vipin Joshi; Rajarshi Roy Chaudhuri; Mohammad Ateeb Munshi; Mehak Ashraf Mir; Saniya Syed Wani; Mayank Shrivastava (IRPS, 2025)

Evidence of Back-Gating and its Impact on Breakdown in GaN-on-Si HEMTs with Carbon Doped Buffer Under Pulsed Conditions. - Mohammad Ateeb Munshi; Mehak Ashraf Mir; Mayank Shrivastava (IRPS, 2025)

Bridging the Performance and Reliability Gap of GaN-on-Si with GaN-on-SiC RF HEMTs by Efficient Electric Field Management Using a Novel p-type Oxide Passivation. - Mohammad Ateeb Munshi; Saniya Syed Wani; Mehak Ashraf Mir; Anup Thakare; Mayank Shrivastava (IRPS, 2025)