A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement. - Mehdi Saremi; Behzad Ebrahimi; Ali Afzali-Kusha; Saeed Mohammadi 002 (Microelectron. Reliab., 2011)

G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems. - Hossein Aghababa; Behzad Ebrahimi; Mehdi Saremi; Vahid Moalemi; Behjat Forouzandeh (IEICE Electron. Express, 2012)

Highly-Doped Through-Contact Silicon Epi Design at 3 nm node. - Sushant Mittal; Ashish Pal; Mehdi Saremi; J. Ferrell; M. Haverty; T. Miyashita; N. Kim; El Mehdi Bazizi; Blessy Alexander; A. B. Sachid; Buvna Ayyagari (DRC, 2019)

Modeling and Optimization of Advanced 3D NAND Memory. - Mehdi Saremi; Ashish Pal; Liu Jiang; El Mehdi Bazizi; Helen Lee; Xi-Wei Lin; Blessy Alexander; Buvna Ayyagari-Sangamalli (DRC, 2020)