Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance. - Lianlian Li; Lei Cao; Xuexiang Zhang; Qingkun Li; Zhenhua Wu; Meihe Zhang; Yunjiao Bao; Peng Wang; Renjie Jiang; Anyan Du; Qingzhu Zhang; Huaxiang Yin (Microelectron. J., 2025)