Design, process, and reliability considerations in silicon-on-insulator (SOI) MOSFETs. - Melanie Sherony (1998)

A 4-91 GHz distributed amplifier in a standard 0.12 μm SOI CMOS microprocessor technology. - Jean-Olivier Plouchart; Jonghae Kim; Noah Zamdmer; Liang-Hung Lu; Melanie Sherony; Yue Tan; Robert A. Groves; Robert Trzcinski; Mohamed Talbi; Asit Ray; Lawrence F. Wagner (CICC, 2003)

A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology. - Jean-Olivier Plouchart; Jonghae Kim; Noah Zamdmer; Melanie Sherony; Yue Tan; Meeyoung Yoon; Mohamed Talbi; Asit Ray; Lawrence F. Wagner (ESSCIRC, 2003)

A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology on high resistivity substrate. - Jonghae Kim; Jean-Olivier Plouchart; Noah Zamdmer; Melanie Sherony; Yue Tan; Meeyoung Yoon; Robert Trzcinski; Mohamed Talbi; John Safran; Asit Ray; Lawrence F. Wagner (ISLPED, 2003)

A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology. - Jean-Olivier Plouchart; Jonghae Kim; Hector Recoules; Noah Zamdmer; Yue Tan; Melanie Sherony; Asit Ray; Lawrence F. Wagner (ISLPED, 2003)

Application of an SOI 0.12-µm CMOS technology to SoCs with low-power and high-frequency circuits. - Jean-Olivier Plouchart; Noah Zamdmer; Jonghae Kim; Melanie Sherony; Yue Tan; Asit Ray; Mohamed Talbi; Lawrence F. Wagner; Kun Wu; Naftali E. Lustig; Shreesh Narasimha; Patricia O'Neil; et al. (IBM J. Res. Dev., 2003)

PD/SOI SRAM performance in presence of gate-to-body tunneling current. - Rajiv V. Joshi; Ching-Te Chuang; Samuel K. H. Fung; Fari Assaderaghi; Melanie Sherony; I. Yang; Ghavam V. Shahidi (IEEE Trans. Very Large Scale Integr. Syst., 2003)

A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology. - Jean-Olivier Plouchart; Jonghae Kim; Noah Zamdmer; Liang-Hung Lu; Melanie Sherony; Yue Tan; Robert A. Groves; Robert Trzcinski; Mohamed Talbi; Asit Ray; Lawrence F. Wagner (IEEE J. Solid State Circuits, 2004)