Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation. - Dipjyoti Das; Lance Fernandes; Prasanna Venkatesan Ravindran; Taeyoung Song; Chinsung Park; Nashrah Afroze; Mengkun Tian; Hang Chen; Winston Chem; Kijoon Kim; Jongho Woo; Suhwan Lim; et al. (IMW, 2024)

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions. - Priyankka Gundlapudi Ravikumar; Prasanna Venkatesan Ravindran; Khandker Akif Aabrar; Taeyoung Song; Sharadindu Gopal Kirtania; Dipjyoti Das; Chinsung Park; Nashrah Afroze; Mengkun Tian; Shimeng Yu; Ahmad Ehtesham Islam; Suman Datta; et al. (IRPS, 2024)

Comparative Study of Channel Materials for Ferroelectric NAND Applications. - Lance Fernandes; Prasanna Venkatesan Ravindran; Mengkun Tian; Yu-Hsin Kuo; Nashrah Afroze; Salma Soliman; Sanghyun Kang; Dyutimoy Chakraborty; Taeyoung Song; Chengyang Zhang; Kijoon Kim; Kwangyou Seo; et al. (IMW, 2025)

Multi-Scale Modeling-Driven Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen Reservoir Layer (ORL) for Improved Endurance. - Andrea Padovani; Nashrah Afroze; Yu-Hsin Kuo; Priyankka Gundlapudi Ravikumar; Prasanna Venkatesan Ravindran; Mengkun Tian; Asif Khan; Jihoon Choi; Jun Hee Lee; Luca Larcher; Gaurav Thareja (IRPS, 2025)

Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps. - Priyankka Gundlapudi Ravikumar; Andrea Padovani; Prasanna Venkatesan Ravindran; Chinsung Park; Nashrah Afroze; Mengkun Tian; Suman Datta; Shimeng Yu; Luca Larcher; Gaurav Thareja; Asif Khan (IRPS, 2025)