Characterization and reliability of III-V gate-all-around MOSFETs. - Mengwei Si; SangHoon Shin; Nathan J. Conrad; Jiangjiang Gu; Jingyun Zhang; Muhammad Ashraful Alam; Peide D. Ye (IRPS, 2015)

Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. - Sami Alghamdi; Wonil Chung; Mengwei Si; Peide D. Ye (DRC, 2018)

Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs. - Wonil Chung; Mengwei Si; Peide D. Ye (DRC, 2018)

2D Ferroelectric CuInP2S6: Synthesis, ReRAM, and FeRAM. - Pai-Ying Liao; Mengwei Si; Gang Qiu; Peide D. Ye (DRC, 2018)

The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. - Jinhyun Noh; Mengwei Si; Hong Zhou; Marko J. Tadjer; Peide D. Ye (DRC, 2018)

High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique. - Gang Qiu; Mengwei Si; Yixiu Wang; Xiao Lyu; Wenzhuo Wu; Peide D. Ye (DRC, 2018)

Low frequency noise in MOS2 negative capacitance field-effect transistor. - Sami Alghamdi; Mengwei Si; Lingming Yang; Peide D. Ye (IRPS, 2018)

III-V and 2D Devices: from MOSFETs to Steep-Slope Transistors - Mengwei Si (2018)

Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack. - Mengwei Si; Xiao Lyu; Peide D. Ye (DRC, 2019)

Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs. - Pai-Ying Liao; Sami Alajlouni; Mengwei Si; Zhuocheng Zhang; Zehao Lin; Jinhyun Noh; Calista Wilk; Ali Shakouri; Peide D. Ye (VLSI Technology and Circuits, 2022)

Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 109 Cycles without VT Drift Penalty. - Zehao Lin; Mengwei Si; Peide D. Ye (VLSI Technology and Circuits, 2022)

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide. - Xiao Lyu; Pragya R. Shrestha; Mengwei Si; Panni Wang; Junkang Li; Kin P. Cheung; Shimeng Yu; Peide D. Ye (VLSI Technology and Circuits, 2022)

Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. - Zhuocheng Zhang; Zehao Lin; Chang Niu; Mengwei Si; Muhammad Ashraful Alam; Peide D. Ye (VLSI Technology and Circuits, 2023)

71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. - Min Zhou; Hong Zhou; Mengwei Si; Guangjie Gao; Xiaojin Chen; Xiaoxiao Zhu; Kui Dang; Peijun Ma; Xiaohua Ma 001; Xuefeng Zheng; Zhihong Liu; Jincheng Zhang; et al. (VLSI Technology and Circuits, 2024)