Deep insight into the voltage amplification effect from ferroelectric negative capacitance. - Huimin Wang; Qianqian Huang; Mengxuan Yang; Xing Zhang 002; Ru Huang 001 (Sci. China Inf. Sci., 2019)

A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning. - Jin Luo; Weikai Xu; Boyi Fu; Zheru Yu; Mengxuan Yang; Yiqing Li; Qianqian Huang; Ru Huang 001 (VLSI Technology and Circuits, 2022)

Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors. - Mengxuan Yang; Qianqian Huang; Chang Su; Liang Chen; Yangyuan Wang; Ru Huang 001 (Sci. China Inf. Sci., 2022)

Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. - Mengxuan Yang; Qianqian Huang; Kaifeng Wang; Chang Su; Liang Chen; Yangyuan Wang; Ru Huang 001 (Sci. China Inf. Sci., 2022)

Twisted TMDs in the Small-Angle Limit: Exponentially Flat and Trivial Bands. - Simon Becker; Mengxuan Yang (SIAM J. Appl. Math., 2025)