High-performance Enhancement-mode GaN Power MIS-FET with Interface Protection Layer. - Mengyuan Hua; Kevin J. Chen (DSP, 2018)

Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET. - Mengyuan Hua; Song Yang; Jin Wei; Zheyang Zheng; Jiabei He; Kevin J. Chen (ASICON, 2019)

E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability. - Mengyuan Hua; Junting Chen; Chengcai Wang; Lingling Li; Ling Liu; Zheyang Zheng; Kevin J. Chen (ASICON, 2021)

Processes of p-GaN Gate HEMTs for High-efficiency and High-reliability Applications. - Junting Chen; Chengcai Wang; Zuoheng Jiang; Mengyuan Hua (ASICON, 2023)

69.7-PFlops Extreme Scale Earthquake Simulation with Crossing Multi-faults and Topography on Sunway. - Wubing Wan; Lin Gan; Wenqiang Wang; Zekun Yin; Haodong Tian; Zhenguo Zhang; Yinuo Wang; Mengyuan Hua; Xiaohui Liu; Shengye Xiang; Zhongqiu He; Zijia Wang; et al. (SC, 2023)

SPICE Modelling-Assisted evaluation of dynamic on-resistance characterization in Schottky p-GaN HEMTs amid synchronous buck transient instabilities. - Xinzhi Liu; Mengyuan Hua; Suhaidi Shafie; Mohd Amran Mohd Radzi; Norhafiz Azis (Comput. Electr. Eng., 2024)