A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. - Merlyne M. De Souza; J. Wang; S. K. Manhas; E. M. Sankara Narayanan; A. S. Oates (Microelectron. Reliab., 2001)

Characterisation of series resistance degradation through charge pumping technique. - S. K. Manhas; D. Chandra Sekhar; A. S. Oates; Merlyne M. De Souza (Microelectron. Reliab., 2003)

A novel double RESURF LDMOS for HVIC's. - S. Hardikar; Merlyne M. De Souza; Y. Z. Xu; T. J. Pease; E. M. Sankara Narayanan (Microelectron. J., 2004)

Progress in MOS-controlled bipolar devices and edge termination technologies. - Ekkanath Madathil Shankara Narayanan; Oana I. Spulber; Mark R. Sweet; J. V. S. C. Bose; Konstantin V. Verchinine; N. Luther-King; Natalia A. Moguilnaia; Merlyne M. De Souza (Microelectron. J., 2004)

Influence of mobility model on extraction of stress dependent source-drain series resistance. - Merlyne M. De Souza; S. K. Manhas; D. Chandra Sekhar; A. S. Oates; Prasad Chaparala (Microelectron. Reliab., 2004)

Innovation in power semiconductor industry: past and future. - Natalia A. Moguilnaia; Konstantin V. Vershinin; Mark R. Sweet; Oana I. Spulber; Merlyne M. De Souza; Ekkanath Madathil Shankara Narayanan (IEEE Trans. Engineering Management, 2005)

Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch. - Peng Luo; Hong Yao Long; Mark R. Sweet; Merlyne M. De Souza; Ekkanath Madathil Shankara Narayanan (ISIE, 2017)