A leakage control system for thermal stability during burn-in test. - Mesut Meterelliyoz; Hamid Mahmoodi; Kaushik Roy 001 (ITC, 2005)

Compact thermal models for estimation of temperature-dependent power/performance in FinFET technology. - Aditya Bansal; Mesut Meterelliyoz; Siddharth Singh; Jung Hwan Choi; Jayathi Murthy; Kaushik Roy 001 (ASP-DAC, 2006)

Leakage power dependent temperature estimation to predict thermal runaway in FinFET circuits. - Jung Hwan Choi; Aditya Bansal; Mesut Meterelliyoz; Jayathi Murthy; Kaushik Roy 001 (ICCAD, 2006)

A CMOS Thermal Sensor and Its Applications in Temperature Adaptive Design. - Qikai Chen; Mesut Meterelliyoz; Kaushik Roy 001 (ISQED, 2006)

Self-Consistent Approach to Leakage Power and Temperature Estimation to Predict Thermal Runaway in FinFET Circuits. - Jung Hwan Choi; Aditya Bansal; Mesut Meterelliyoz; Jayathi Murthy; Kaushik Roy 001 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007)

A high sensitivity process variation sensor utilizing sub-threshold operation. - Mesut Meterelliyoz; Peilin Song; Franco Stellari; Jaydeep P. Kulkarni; Kaushik Roy 001 (CICC, 2008)

Thermal analysis of 8-T SRAM for nano-scaled technologies. - Mesut Meterelliyoz; Jaydeep P. Kulkarni; Kaushik Roy 001 (ISLPED, 2008)

Rethinking Refresh: Increasing Availability and Reducing Power in DRAM for Cache Applications. - Philip G. Emma; William R. Reohr; Mesut Meterelliyoz (IEEE Micro, 2008)

Design for burn-in test: a technique for burn-in thermal stability under die-to-die parameter variations. - Mesut Meterelliyoz; Kaushik Roy 001 (ASP-DAC, 2009)

Statistical yield analysis of silicon-on-insulator embedded DRAM. - Rouwaida Kanj; Rajiv V. Joshi; Jente B. Kuang; J. Kim; Mesut Meterelliyoz; William R. Reohr; Sani R. Nassif; Kevin J. Nowka (ISQED, 2009)

Accurate characterization of random process variations using a robust low-voltage high-sensitivity sensor featuring replica-bias circuit. - Mesut Meterelliyoz; Ashish Goel; Jaydeep P. Kulkarni; Kaushik Roy 001 (ISSCC, 2010)

Analysis of SRAM and eDRAM Cache Memories Under Spatial Temperature Variations. - Mesut Meterelliyoz; Jaydeep P. Kulkarni; Kaushik Roy 001 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2010)

Characterization of Random Process Variations Using Ultralow-Power, High-Sensitivity, Bias-Free Sub-Threshold Process Sensor. - Mesut Meterelliyoz; Peilin Song; Franco Stellari; Jaydeep P. Kulkarni; Kaushik Roy 001 (IEEE Trans. Circuits Syst. I Regul. Pap., 2010)

Integrated Design & Test: Conquering the Conflicting Requirements of Low-Power, Variation-Tolerance and Test Cost. - Ashish Goel; Swaroop Ghosh; Mesut Meterelliyoz; Jeff Parkhurst; Kaushik Roy 001 (Asian Test Symposium, 2011)

A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry. - Eric Karl; Yih Wang; Yong-Gee Ng; Zheng Guo; Fatih Hamzaoglu; Mesut Meterelliyoz; John Keane 001; Uddalak Bhattacharya; Kevin Zhang 001; Kaizad Mistry; Mark Bohr (IEEE J. Solid State Circuits, 2013)

13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology. - Fatih Hamzaoglu; Umut Arslan; Nabhendra Bisnik; Swaroop Ghosh; Manoj B. Lal; Nick Lindert; Mesut Meterelliyoz; Randy B. Osborne; Joodong Park; Shigeki Tomishima; Yih Wang; Kevin Zhang 001 (ISSCC, 2014)

2nd generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology. - Mesut Meterelliyoz; Fuad H. Al-amoody; Umut Arslan; Fatih Hamzaoglu; Luke Hood; Manoj B. Lal; Jeffrey L. Miller; Anand Ramasundar; Dan Soltman; Ifar Wan; Yih Wang; Kevin Zhang 001 (VLSIC, 2014)

A 1 Gb 2 GHz 128 GB/s Bandwidth Embedded DRAM in 22 nm Tri-Gate CMOS Technology. - Fatih Hamzaoglu; Umut Arslan; Nabhendra Bisnik; Swaroop Ghosh; Manoj B. Lal; Nick Lindert; Mesut Meterelliyoz; Randy B. Osborne; Joodong Park; Shigeki Tomishima; Yih Wang; Kevin Zhang 001 (IEEE J. Solid State Circuits, 2015)

A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V. - Pulkit Jain; Umut Arslan; Meenakshi Sekhar; Blake C. Lin; Liqiong Wei; Tanaya Sahu; Juan Alzate-vinasco; Ajay Vangapaty; Mesut Meterelliyoz; Nathan Strutt; Albert B. Chen; Patrick Hentges; et al. (ISSCC, 2019)

A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique. - Liqiong Wei; Juan G. Alzate; Umut Arslan; Justin Brockman; Nilanjan Das; Kevin Fischer; Tahir Ghani; Oleg Golonzka; Patrick Hentges; Rawshan Jahan; Pulkit Jain; Blake C. Lin; et al. (ISSCC, 2019)