Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET. - Miaomiao Wang 006; Zuoguang Liu; Tenko Yamashita; James H. Stathis; Chia-Yu Chen (IRPS, 2015)

An overview on rough neural networks. - Hongmei Liao; Shifei Ding; Miaomiao Wang 006; Gang Ma 001 (Neural Comput. Appl., 2016)

Hot carrier reliability in ultra-scaled sige channel p-FinFETs. - Miaomiao Wang 006; Xin Miao; James H. Stathis; Richard G. Southwick (ASICON, 2017)

Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics. - Miaomiao Wang 006; Richard G. Southwick; Kangguo Cheng; James H. Stathis (IRPS, 2018)

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs. - Narendra Parihar; Uma Sharma; Richard G. Southwick; Miaomiao Wang 006; James H. Stathis; Souvik Mahapatra (IRPS, 2019)

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. - Miaomiao Wang 006; Jingyun Zhang; Huimei Zhou; Richard G. Southwick; Robin Hsin Kuo Chao; Xin Miao; Veeraraghavan S. Basker; Tenko Yamashita; Dechao Guo; Gauri Karve; Huiming Bu; James H. Stathis (IRPS, 2019)

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. - Nilotpal Choudhury; Uma Sharma; Huimei Zhou; Richard G. Southwick; Miaomiao Wang 006; Souvik Mahapatra (IRPS, 2020)

A new technique for evaluating stacked nanosheet inner spacer TDDB reliability. - Tian Shen; Koji Watanabe; Huimei Zhou; Michael Belyansky; Erin Stuckert; Jingyun Zhang; Andrew Greene; Veeraraghavan S. Basker; Miaomiao Wang 006 (IRPS, 2020)

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. - Huimei Zhou; Miaomiao Wang 006; Jingyun Zhang; Koji Watanabe; Curtis Durfee; Shogo Mochizuki; Ruqiang Bao; Richard G. Southwick; Maruf Bhuiyan; Basker Veeraraghavan (IRPS, 2020)

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs. - Nilotpal Choudhury; Tarun Samadder; Ravi Tiwari; Huimei Zhou; Richard G. Southwick; Miaomiao Wang 006; Souvik Mahapatra (IRPS, 2021)

TDDB Reliability in Gate-All-Around Nanosheet. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Tian Shen; Ernest Y. Wu; Richard G. Southwick; Jingyun Zhang; Veeraraghavan S. Basker; Dechao Guo (IRPS, 2021)

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. - Ernest Y. Wu; Ron Bolam; Baozhen Li; Tian Shen; Barry P. Linder; Griselda Bonilla; Miaomiao Wang 006; Dechao Guo (IRPS, 2022)

SiGe Gate-All-around Nanosheet Reliability. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Curtis Durfee; Liqiao Qin; Jingyun Zhang (IRPS, 2022)

Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices. - Huimei Zhou; Miaomiao Wang 006; Nicolas Loubet; Andrew Gaul; Yasir Sulehria (IRPS, 2023)

A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction. - Ernest Y. Wu; Brian T. McGowan; Ronald Bolam; Huai Huang; Huimei Zhou; Miaomiao Wang 006 (IRPS, 2024)

Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling. - Huimei Zhou; Miaomiao Wang 006; Ernest Y. Wu (IRPS, 2024)

Backside Power Distribution for Nanosheet Technologies Beyond 2nm. - Ruilong Xie; Wonhyuk Hong; Chen Zhang; Jongjin Lee; Kevin Brew; Richard Johnson; Nicholas A. Lanzillo; Hosadurga Shobha; Taesun Kim; Panjae Park; Shogo Mochizuki; Iqbal Saraf; et al. (VLSI Technology and Circuits, 2024)