A new technique for evaluating stacked nanosheet inner spacer TDDB reliability. - Tian Shen; Koji Watanabe; Huimei Zhou; Michael Belyansky; Erin Stuckert; Jingyun Zhang; Andrew Greene; Veeraraghavan S. Basker; Miaomiao Wang 006 (IRPS, 2020)

Backside Power Distribution for Nanosheet Technologies Beyond 2nm. - Ruilong Xie; Wonhyuk Hong; Chen Zhang; Jongjin Lee; Kevin Brew; Richard Johnson; Nicholas A. Lanzillo; Hosadurga Shobha; Taesun Kim; Panjae Park; Shogo Mochizuki; Iqbal Saraf; et al. (VLSI Technology and Circuits, 2024)