A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology. - Qiang Yu; Derek Thomson; Han Wui Then; Alvaro Latorre-Rey; Marko Radosavljevic; Michael Beumer; Pratik Koirala; Nicole Thomas; Nityan Nair; Heli Vora; Samuel Bader; Said Rami (BCICTS, 2022)

5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology. - Qiang Yu; Han Wui Then; Derek Thomson; Jessica C. Chou; Jeffrey Garrett; Iwen Huang; Ibukunoluwa Momson; Surej Ravikumar; Seahee Hwangbo; Alvaro Latorre-Rey; Ananda Roy; Marko Radosavljevic; et al. (VLSI Technology and Circuits, 2022)

Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS. - Samuel James Bader; Ahmad Zubair; Alvaro Latorre-Rey; Mikkel Hansen; Soumen Sarkar; Abdul Asif; Dimitri Frolov; Kaushik Narayanan; Jag Rangaswamy; Puneet Kanwar Kaur; Sanjeev Kumar; Nirmal Kundu; et al. (BCICTS, 2024)

PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors. - Soumitra Joy; Kaustubh Joshi 003; Ahmad Zubair; Samuel Bader; Jason Peck; Michael Beumer; Pratik Koirala; Marko Radosavljevic; Heli Vora; Inanc Meric; Han Wui Then (IRPS, 2024)