A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching. - Patrick Waltereit; Marina Preschle; Stefan Müller; Lutz Kirste; Heiko Czap; Joachim Ruster; Michael Dammann; Richard Reiner (DRC, 2018)

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. - Tobias Kemmer; Michael Dammann; Martina Baeumler; Vladimir Polyakov; Peter Brückner; Helmer Konstanzer; Rüdiger Quay; Oliver Ambacher (IRPS, 2020)

An Empirical Evaluation of Machine Learning Methods for the Insurance Industry. - Michael Dammann; Nicolai Gnoss; Pamela Kunert; Eike-Christian Ramcke; Tobias Schreier; Ulrike Steffens; Olaf Zukunft (ICICT (2), 2021)

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $ mathrm{f}_{ mathrm{t}}=10.2$ GHz. - Matthias Sinnwell; Michael Dammann; Rachid Driad; Sebastian Krause; Stefano Leone; Michael Mikulla; Rüdiger Quay (DRC, 2023)

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. - Matthias Sinnwell; Michael Dammann; Rachid Driad; Stefano Leone; Michael Mikulla; Rüdiger Quay (DRC, 2024)