Impact of self-heating and thermal coupling on analog circuits in SOI CMOS. - Bernard M. Tenbroek; Michael S. L. Lee; William Redman-White; R. John T. Bunyan; Michael J. Uren (IEEE J. Solid State Circuits, 1998)

A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments. - Christopher F. Edwards; William Redman-White; Mark Bracey; Bernard M. Tenbroek; Michael S. L. Lee; Michael J. Uren (IEEE J. Solid State Circuits, 1999)

A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation. - Mike S. L. Lee; Bernard M. Tenbroek; William Redman-White; James Benson; Michael J. Uren (IEEE J. Solid State Circuits, 2001)

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. - Arnaud Curutchet; Nathalie Malbert; Nathalie Labat; André Touboul; Christophe Gaquière; A. Minko; Michael J. Uren (Microelectron. Reliab., 2003)

Development of an RF IV waveform based stress test procedure for use on GaN HFETs. - William McGenn; Michael J. Uren; Johannes Benedikt; Paul J. Tasker (Microelectron. Reliab., 2012)

Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors. - Janina Möreke; Chris Hodges; Laura L. E. Mears; Michael J. Uren; Robert M. Richardson; Martin Kuball (Microelectron. Reliab., 2014)

Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation. - Huarui Sun; Miguel Montes Bajo; Michael J. Uren; Martin Kuball (Microelectron. Reliab., 2014)

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. - Tommaso Brazzini; Michael A. Casbon; Huarui Sun; Michael J. Uren; Jonathan Lees; Paul J. Tasker; Helmut Jung; Hervé Blanck; Martin Kuball (Microelectron. Reliab., 2015)

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. - James W. Pomeroy; Michael J. Uren; Benoit Lambert; Martin Kuball (Microelectron. Reliab., 2015)

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. - Arno Stockman; Michael J. Uren; Alaleh Tajalli; Matteo Meneghini; Benoit Bakeroot; Peter Moens (ESSDERC, 2017)

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs. - Alexander Pooth; Johan Bergsten; Niklas Rorsman; Hassan Hirshy; R. Perks; Paul J. Tasker; Trevor Martin; Richard F. Webster; Dave Cherns; Michael J. Uren; Martin Kuball (Microelectron. Reliab., 2017)

On the origin of dynamic Ron in commercial GaN-on-Si HEMTs. - Serge Karboyan; Michael J. Uren; Manikant; James W. Pomeroy; Martin Kuball (Microelectron. Reliab., 2018)

Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer. - Michael J. Uren; Martin Kuball (BCICTS, 2020)

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs. - Akhil S. Kumar; Michael J. Uren; Matthew D. Smith 003; Martin Kuball; Justin Parke; H. George Henry; Robert S. Howell (IRPS, 2023)