Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. - Kiyoteru Hayama; Kenichiro Takakura; Hidenori Ohyama; Abdelkarim Mercha; Eddy Simoen; Cor Claeys; Joan Marc Rafí; Michael Kokkoris (Microelectron. Reliab., 2004)