Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices. - Alexander I. Fedoseyev; Marek Turowski; Ashok Raman; Michael L. Alles; Robert A. Weller (ICCS (2), 2008)

Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices. - Alexander I. Fedoseyev; Marek Turowski; Michael L. Alles; Robert A. Weller (Math. Comput. Simul., 2008)

The sensitivity of radiation-induced leakage to STI topology and sidewall doping. - Nadia Rezzak; Michael L. Alles; Ronald D. Schrimpf; Sarah Kalemeris; Lloyd W. Massengill; John Sochacki; Hugh J. Barnaby (Microelectron. Reliab., 2011)

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. - Nadia Rezzak; Pierre Maillard; Ronald D. Schrimpf; Michael L. Alles; Daniel M. Fleetwood; Yanfeng Albert Li (Microelectron. Reliab., 2012)

Total-ionizing-dose effects and reliability of carbon nanotube FET devices. - Cher Xuan Zhang; En-xia Zhang; Daniel M. Fleetwood; Michael L. Alles; Ronald D. Schrimpf; Chris Rutherglen; Kosmas Galatsis (Microelectron. Reliab., 2014)

Multi-cell soft errors at the 16-nm FinFET technology node. - N. Tam; Bharat L. Bhuva; Lloyd W. Massengill; Dennis R. Ball; Michael W. McCurdy; Michael L. Alles; Indranil Chatterjee (IRPS, 2015)

Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation. - M. L. Breeding; Robert A. Reed; K. M. Warren; Michael L. Alles (IRPS, 2019)

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. - Peng Wang; En-xia Zhang; Daniel M. Fleetwood; Peng Fei Wang; Michael W. McCurdy; Ji-Tzouh Lin; Michael L. Alles; Jim L. Davidson; Bruce W. Alphenaar; Ronald D. Schrimpf (ASICON, 2021)

Charge Trapping in Irradiated 3D Devices and ICs (Invited). - En-xia Zhang; Shintaro Toguchi; Zi Xiang Guo; Michael L. Alles; Ronald D. Schrimpf; Daniel M. Fleetwood (IRPS, 2024)